Optical properties of porous silicon.: Part I:: Fabrication and investigation of single layers

被引:24
作者
Kordás, K
Pap, AE
Beke, S
Leppävuori, S
机构
[1] Oulu Univ, Microelect Lab, FIN-90014 Oulu, Finland
[2] Oulu Univ, EMPART Res Grp Infotech Oulu, FIN-90014 Oulu, Finland
基金
芬兰科学院;
关键词
porous silicon; refractive index; optical absorption; envelope function;
D O I
10.1016/S0925-3467(03)00253-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The wavelength dependent optical parameters such as refractive index n and absorption coefficient alpha of porous silicon (PS) have been calculated from optical transmission spectra of plan-parallel films having different porosities. Since the effects of manufacturing conditions on film porosity and thickness have been investigated as well, a complete set of data is obtained enabling the design and easy realization of PS layers with certain structural and optical properties in advanced applications for optoelectronics and sensors. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:251 / 255
页数:5
相关论文
共 18 条
[1]   Let there be light [J].
Ball, P .
NATURE, 2001, 409 (6823) :974-976
[2]   Progress towards achieving integrated circuit functionality using porous silicon optoelectronic components [J].
Benson, TM ;
Arrand, HF ;
Sewell, P ;
Niemeyer, D ;
Loni, A ;
Bozeat, RJ ;
Krüger, M ;
Arens-Fischer, R ;
Thönissen, M ;
Lüth, H .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :92-99
[3]   Gaining light from silicon [J].
Canham, L .
NATURE, 2000, 408 (6811) :411-412
[4]   Electrochemical preparation of porous semiconductors: from phenomenology to understanding [J].
Chazalviel, JN ;
Wehrspohn, RB ;
Ozanam, F .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :1-10
[5]   THE USE OF INFRARED INTERFERENCE SPECTRA TO MEASURE CERAMIC COATING THICKNESS IN A CVD-REACTOR [J].
CLARK, TJ ;
BANASH, MA ;
CRUSE, RW ;
FECH, J ;
MININNI, RM ;
ROHMAN, SJ .
THIN SOLID FILMS, 1995, 254 (1-2) :7-9
[6]   Porous silicon layers used for gas sensor applications [J].
Foucaran, A ;
PascalDelannoy, F ;
Giani, A ;
Sackda, A ;
Combette, P ;
Boyer, A .
THIN SOLID FILMS, 1997, 297 (1-2) :317-320
[7]   On the mechanism of porous silicon formation [J].
Goryachev, DN ;
Belyakov, LV ;
Sreseli, OM .
SEMICONDUCTORS, 2000, 34 (09) :1090-1093
[8]   Silicon-based visible light-emitting devices integrated into microelectronic circuits [J].
Hirschman, KD ;
Tsybeskov, L ;
Duttagupta, SP ;
Fauchet, PM .
NATURE, 1996, 384 (6607) :338-341
[9]   Determination of sensoric parameters of porous silicon in sensing of organic vapors [J].
Holec, T ;
Chvojka, T ;
Jelínek, I ;
Jindrich, J ;
Nemec, I ;
Pelant, I ;
Valenta, J ;
Dian, J .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2) :251-254
[10]   Manufacturing of porous silicon;: porosity and thickness dependence on electrolyte composition [J].
Kordás, K ;
Remes, J ;
Beke, S ;
Hu, T ;
Leppävuori, S .
APPLIED SURFACE SCIENCE, 2001, 178 (1-4) :190-193