Recent progress in epitaxial growth of III-V quantum-dot lasers on silicon substrate

被引：36

作者：

Pan, Shujie ^{[1
]}

Cao, Victoria ^{[1
]}

Liao, Mengya ^{[1
]}

Lu, Ying ^{[1
]}

Liu, Zizhuo ^{[1
]}

Tang, Mingchu ^{[1
]}

Chen, Siming ^{[1
]}

Seeds, Alwyn ^{[1
]}

Liu, Huiyun ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 10期

基金：

英国工程与自然科学研究理事会;

关键词：

quantum dots; silicon photonics; epitaxial growth; semiconductor laser; MU-M; LOW-THRESHOLD; OPTICAL-PROPERTIES; MICRODISK LASERS; SI SUBSTRATE; HIGH-SPEED; ARRAY; GAAS; PHOTODETECTORS; INTEGRATION;

D O I：

10.1088/1674-4926/40/10/101302

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III-V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III-V compounds. Although the material dissimilarity between III-V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III-V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

引用

页数：9

共 70 条

[1]

Agrawal GP, 2013, 2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC)

[2] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (11) :L843-L845

[3] Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility [J].

Alcotte, R. ;

Martin, M. ;

Moeyaert, J. ;

Cipro, R. ;

David, S. ;

Bassani, F. ;

Ducroquet, F. ;

Bogumilowicz, Y. ;

Sanchez, E. ;

Ye, Z. ;

Bao, X. Y. ;

Pin, J. B. ;

Baron, T. .

APL MATERIALS, 2016, 4 (04)

[4]

ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1103

[5] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[6] Silicon on ultra-low-loss waveguide photonic integration platform [J].

Bauters, Jared F. ;

Davenport, Michael L. ;

Heck, Martijn J. R. ;

Doylend, J. K. ;

Chen, Arnold ;

Fang, Alexander W. ;

Bowers, John E. .

OPTICS EXPRESS, 2013, 21 (01) :544-555

[7] Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser [J].

Capua, A. ;

Rozenfeld, L. ;

Mikhelashvili, V. ;

Eisenstein, G. ;

Kuntz, M. ;

Laemmlin, M. ;

Bimberg, D. .

OPTICS EXPRESS, 2007, 15 (09) :5388-5393

[8] 1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C [J].

Chen, S. M. ;

Tang, M. C. ;

Wu, J. ;

Jiang, Q. ;

Dorogan, V. G. ;

Benamara, M. ;

Mazur, Y. I. ;

Salamo, G. J. ;

Seeds, A. J. ;

Liu, H. .

ELECTRONICS LETTERS, 2014, 50 (20) :1467-1468

[9] Electrically pumped continuous-wave 1.3 μm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates [J].

Chen, Siming ;

Liao, Mengya ;

Tang, Mingchu ;

Wu, Jiang ;

Martin, Mickael ;

Baron, Thierry ;

Seeds, Alwyn ;

Liu, Huiyun .

OPTICS EXPRESS, 2017, 25 (05) :4632-4639

[10]

Chen SM, 2016, NAT PHOTONICS, V10, P307, DOI [10.1038/nphoton.2016.21, 10.1038/NPHOTON.2016.21]

← 1 2 3 4 5 6 7 →