A complementary metal-oxide semiconductor digitally programmable current conveyor

被引:20
|
作者
Alzaher, Hussain [1 ]
Tasadduq, Noman [1 ]
Al-Ees, Osama [1 ]
Al-Ammari, Fares [1 ]
机构
[1] King Fahd Univ Petr & Minerals, Dept Elect Engn, Dhahran 31261, Saudi Arabia
关键词
current-mode circuits; current conveyor; CMOS analog filter design; digitally programmable devices; mixed signals processing; CURRENT-MODE FILTERS; UNIVERSAL FILTER; DESIGN;
D O I
10.1002/cta.786
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A second-generation current conveyor with digitally programmable current gains is presented. A current division network with zero standby power consumption is utilized in two different ways to provide both gain and attenuation of the second-generation current conveyor's current transfer characteristics. The proposed topology overcomes several drawbacks of the previous solutions through affording a more power and area efficient solution while exhibiting relatively wider tuning range and bandwidth. A variable-gain amplifier and a two-integrator-loop filter biquad providing low-pass and band-pass responses are given as application examples. A modified two-integrator-loop topology is developed to offer independent control of the pole frequency and quality factor without disturbing the passband gain. Simulation results obtained from a standard 0.18 mu m complementary metaloxide semiconductor process are given. Copyright (C) 2011 John Wiley & Sons, Ltd.
引用
收藏
页码:69 / 81
页数:13
相关论文
共 50 条
  • [21] RADIATION TESTING COMPLEMENTARY (SYMMETRY) METAL-OXIDE SEMICONDUCTOR (CMOS) ARRAYS FOR SATELLITES
    MATTEUCCI, AJ
    SCHNEIDER, MF
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1977, 24 (06) : 2285 - 2288
  • [22] ELECTRON-BEAM PROGRAMMING AND TESTING OF COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR SYSTEMS
    LYSZCZARZ, TM
    OLIVER, S
    FRIED, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 97 - 101
  • [23] SIMPLE STIMULUS ISOLATION UNIT USING A COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR SWITCH
    POLITOFF, AL
    EXPERIENTIA, 1975, 31 (12): : 1474 - 1475
  • [24] THERMAL MODELING OF CMOS (COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR) TEMPERATURE AND (OR) FLOW MICROSENSORS
    CHAU, K
    ALLEGRETTO, W
    RISTIC, L
    CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 212 - 216
  • [25] RESETDOMINATE RING COUNTER USING COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR DEVICES.
    Blount, F.
    Chin, W.B.
    Hansen, K.M.
    Pomeranz, J.N.
    1600, (16):
  • [26] Evaluation of titanium silicon nitride as gate electrodes for complementary metal-oxide semiconductor
    Luan, H
    Alshareef, HN
    Harris, HR
    Wen, HC
    Choi, K
    Senzaki, Y
    Majhi, P
    Lee, BH
    APPLIED PHYSICS LETTERS, 2006, 88 (14)
  • [27] DNA detection using a complementary metal-oxide semiconductor ring oscillator circuit
    Kocanda, Martin
    Abdel-Motaleb, Ibrahim
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (07)
  • [28] Complementary metal-oxide semiconductor implementation of digital filters for signal processing applications
    Kumar, Ahlad
    IET CIRCUITS DEVICES & SYSTEMS, 2015, 9 (04) : 290 - 298
  • [29] Improvement of metal-oxide semiconductor interface characteristics in complementary metal-oxide semiconductor on Si(111) by combination of fluorine implantation and long-time hydrogen annealing
    Kato, Y
    Takao, H
    Sawada, K
    Ishida, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (4-7): : L108 - L110
  • [30] Improvement of metal-oxide semiconductor interface characteristics in complementary metal-oxide semiconductor on Si(111) by combination of fluorine implantation and long-time hydrogen annealing
    Kato, Yoshiko
    Takao, Hidekuni
    Sawada, Kazuaki
    Ishtda, Makoto
    Japanese Journal of Applied Physics, Part 2: Letters, 1600, 45 (4-7):