Characterization and hydrogen gas sensing properties of TiO2 thin films prepared by sol-gel method

被引：57

作者：

Haidry, Azhar Ali ^{[2
]}

Puskelova, Jarmila ^{[1
]}

Plecenik, Tomas ^{[2
]}

Durina, Pavol ^{[2
]}

Gregus, Jan ^{[2
]}

Truchly, Martin ^{[2
]}

Roch, Tomas ^{[2
]}

Zahoran, Miroslav ^{[2
]}

Vargova, Melinda ^{[1
]}

Kus, Peter ^{[2
]}

Plecenik, Andrej ^{[2
]}

Plesch, Gustav ^{[1
]}

机构：

[1] Comenius Univ, Fac Nat Sci, Dept Inorgan Chem, Bratislava, Slovakia

[2] Comenius Univ, Fac Math Phys & Informat, Dept Expt Phys, Bratislava, Slovakia

来源：

APPLIED SURFACE SCIENCE | 2012年 / 259卷

关键词：

TiO2; Sol-gel; Annealing effect; Grain size; Surface roughness; Band gap; Activation energy; Hydrogen gas sensor; SENSOR; TEMPERATURE; SENSITIVITY; PERFORMANCE;

D O I：

10.1016/j.apsusc.2012.07.030

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of titanium dioxide with thickness of about 150 nm were deposited by spin coating method on a sapphire substrate from a sol-gel and annealed at various temperatures (from 600 degrees C to 1000 degrees C). Structural, optical and hydrogen gas sensing properties of the films were investigated. The annealing temperatures from 600 to 800 degrees C led to anatase phase with grain size in the range of 14-28 nm. Further increase of the annealing temperature resulted in transformation to rutile phase with larger grain size of about 100-120 nm. The optical band gap tended to decrease with increasing annealing temperature. The estimated values of activation energy for charge transport were in the range of 0.6-1.0 eV for films annealed at temperatures from 600 degrees C to 800 degrees C and 0.37-0.38 eV for films annealed at 900 degrees C and 1000 degrees C. The films annealed at 900 degrees C and 1000 degrees C showed better hydrogen sensitivity, what can be at least partially caused by their higher surface roughness. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：270 / 275

页数：6

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