Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells

被引：24

作者：

Kyhm, K

Taylor, RA

Ryan, JF

Someya, T

Arakawa, Y

机构：

[1] Univ Oxford, Clarendon Lab, Oxford OX1 3PU, England

[2] Univ Tokyo, Inst Ind Sci, Minato Ku, Tokyo 1068558, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 21期

关键词：

D O I：

10.1063/1.1421094

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with the edge emission intensity as a function of the stripe length. This is found to fit very well with our data, even beyond the saturation region. (C) 2001 American Institute of Physics.

引用

页码：3434 / 3436

页数：3

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