Investigations on radiation hardness of DEPFET sensors for the Belle II detector

被引：4

作者：

Ritter, Andreas ^{[1
,2
]}

Andricek, Ladislav ^{[1
,2
]}

Kleinohl, Tobias ^{[3
]}

Koffmane, Christian ^{[1
,2
,4
]}

Luetticke, Florian ^{[3
]}

Marinas, Carlos ^{[3
]}

Moser, Hans-Guenther ^{[1
,2
]}

Ninkovic, Jelena ^{[1
,2
]}

Richter, Rainer ^{[1
,2
]}

Schaller, Gerhard ^{[1
,2
]}

Schnecke, Martina ^{[1
,2
]}

Schopper, Florian ^{[1
,2
]}

机构：

[1] Max Planck Inst Phys & Astrophys, Halbleiterlab, D-80805 Munich, Germany

[2] Max Planck Inst Extraterr Phys, D-80805 Munich, Germany

[3] Univ Bonn, Inst Phys, D-53115 Bonn, Germany

[4] TU Berlin, Fac Elect Engn & Comp Sci Sensor & Actuator Syst, D-10587 Berlin, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 730卷

关键词：

DEPFET; Radiation damage; Particle tracking detectors; Silicon dioxide; Silicon detector; MOS OXIDES; DEVICES; CHARGE; SIMULATION;

D O I：

10.1016/j.nima.2013.04.069

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In the upgrade of the Belle detector at KEK (Tsukuba, japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10 MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent Lest structures and compare radiation hardness for different oxide parameters in the prototype production. (C) 2013 Published by Elsevier B.V.

引用

页码：79 / 83

页数：5

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