A Versatile Flicker Noise Measurement System and Its Applications in CMOS Process

被引:0
作者
Ma, Zhijian [1 ]
Liu, Zhihong [1 ]
机构
[1] 2025 Gateway Pl,Suite 130, San Jose, CA 95014 USA
来源
2016 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2016年
关键词
Flicker noise; 1/f noise; noise measurement; low-noise voltage and current amplifier; noise modeling and noise simulation;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A versatile multi-amplifier flicker noise measurement system with various programmable configurations was developed for accurate and fast on-wafer flicker noise measurement. The noise system performance, which includes system resolution, corner frequency and bandwidth, are thoroughly analyzed by correlating various system configurations, such as selection of LNAs, LNA noise floor, DUT output impedance, and parasitic stray capacitance of on-wafer prober. The system versatility and efficiency are also discussed. A few typical noise measurements are presented in the applications.
引用
收藏
页码:220 / 225
页数:6
相关论文
共 7 条
[1]  
[Anonymous], 1998, 9812A B NOIS MEAS SY
[2]  
[Anonymous], 2013, 9812D NOIS MEAS SYST
[3]  
[Anonymous], 1996, 9603 NOIS MEAS SYST
[4]   1/F NOISE AND THE FIELD-EFFECT IN GATED RESISTORS [J].
GARFUNKEL, GA ;
WEISSMAN, MB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :634-636
[5]   A UNIFIED MODEL FOR THE FLICKER NOISE IN METAL OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
HUNG, KK ;
KO, PK ;
HU, CM ;
CHENG, YC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :654-665
[6]   Impact of process scaling on 1/f noise in advanced CMOS technologies [J].
Knitel, MJ ;
Woerlee, PH ;
Scholten, AJ ;
Zegers-Van Duijnhoven, ATA .
INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :463-466
[7]  
Martin J. C., 1966, VERY LOW FREQUENCY M, V2, P343