Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

被引：46
作者：
Li, Yingtao [1 ,2 ]
Yuan, Peng [2 ]
Fu, Liping [3 ]
Li, Rongrong [2 ]
Gao, Xiaoping [4 ]
Tao, Chunlan [2 ]
机构：
[1] Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China
[2] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[3] Lanzhou Univ, Cuiying Honors Coll, Lanzhou 730000, Peoples R China
[4] Gansu Acad Sci, Inst Sensor Technol, Lanzhou 730000, Peoples R China
来源：
NANOTECHNOLOGY | 2015年 / 26卷 / 39期
基金：
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词：
resistive switching; volatile; nonvolatile; CONDUCTIVE FILAMENTS; MEMORY; BIPOLAR; DEVICE; ARRAY;
D O I：
10.1088/0957-4484/26/39/391001
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO2/TiO2/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (< 10 mu A), the Cu/ZrO2/TiO2/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 10(6). The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 mu A. Furthermore, by using different reset voltages, the Cu/ZrO2/TiO2/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO2/TiO2/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.
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页数：5
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