Frequency dependent capacitance and conductance properties of Schottky diode based on rubrene organic semiconductor

Al/rubrene/p-Si Schottky diode has been fabricated by forming a rubrene layer on p type Si by using the spin coating method. The frequency dependent capacitance-voltage (C-V-f) and conductance-voltage (G-V-f) characteristics of Al/rubrene/p-Si Schottky diyotes has been investigated in the frequency range of 5 kHz-500 kHz at room temperature. The C-V plots show a peak for each frequency. The capacitance of the device decreased with increasing frequency. The decrease in capacitance results from the presence of interface states. The plots of series resistance-voltage (R-s-V) gave a peak in the depletion region at all frequencies. The density of interface states (N-ss) and relaxation time (tau) distribution profiles as a function of applied voltage bias have been determined from the C-V and G-V measurements. The values of the N-ss, and tau have been calculated in the ranges of 8.37 x 10(11)-4.85 x 10(11) eV(-1) cm(-2) and 5.17 x 10(-6)-1.02 x 10(-5) s, respectively. (C) 2013 Elsevier BY. All rights reserved.