Ferroelectricity in Gd-Doped HfO2 Thin Films

被引：243

作者：

Mueller, S. ^{[1
]}

Adelmann, C. ^{[2
]}

Singh, A. ^{[1
]}

Van Elshocht, S. ^{[2
]}

Schroeder, U. ^{[1
]}

Mikolajick, T. ^{[1
,3
]}

机构：

[1] Namlab gGmbH, D-01187 Dresden, Germany

[2] IMEC, B-3001 Louvain, Belgium

[3] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2012年 / 1卷 / 06期

关键词：

POLARIZATION;

D O I：

10.1149/2.002301jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The incorporation of Gd into HfO2 thin films is shown to induce ferroelectricity. A significant influence of electric field cycling on both polarization as well as small-signal capacitance-voltage measurements can be observed. X-ray diffraction measurements are supported by infrared absorption analysis and give further evidence of the previously proposed non-centrosymmetric transition phase of space group Pbc2(1). (C) 2012 The Electrochemical Society. All rights reserved.

引用

页码：N123 / N126

页数：4

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