Complex effective index in graphene-silicon waveguides

被引:32
|
作者
Sorianello, V. [1 ]
De Angelis, G. [2 ]
Cassese, T. [2 ]
Midrio, M. [3 ]
Romagnoli, M. [1 ]
Mohsin, M. [4 ]
Otto, M. [4 ]
Neumaier, D. [4 ]
Asselberghs, I. [5 ]
Van Campenhout, J. [5 ]
Huyghebaert, C. [5 ]
机构
[1] Consorzio Nazl Telecomunicaz CNIT, Natl Lab Photon Networks, Via G Moruzzi 1, I-56124 Pisa, Italy
[2] Scuola Super Sant Anna, Tecip Inst, Via G Moruzzi 1, I-56124 Pisa, Italy
[3] Univ Udine, Consorzio Nazl Telecomunicazioni CNIT, Via Sci 206, I-33100 Udine, Italy
[4] Appl Micro & Optoelect AMO GmbH, Adv Microelect Ctr Aachen AMICA, Otto Blumenthalstr 25, D-52074 Aachen, Germany
[5] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
来源
OPTICS EXPRESS | 2016年 / 24卷 / 26期
关键词
OPTICAL MODULATOR; PHOTODETECTOR; PHOTONICS; DESIGN; SIO2;
D O I
10.1364/OE.24.029984
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report for the first time and characterize experimentally the complex optical conductivity of graphene on silicon photonic waveguides. This permits us to predict accurately the behavior of photonic integrated devices encompassing graphene layers. Exploiting a Si microring add/drop resonator, we show the effect of electrical gating of graphene on the complex effective index of the waveguide by measuring both the wavelength shift of the resonance and the change in the drop peak transmission. Due to electro-refractive effect of graphene a giant (> 10(-3)) change in the effective index is demonstrated for the first time on Si photonics waveguides and this large effect will crucially impact performances and consumption of Si photonics devices. We confirmed the results by two independent experiments involving two different gating schemes: Si gating through the ridge waveguide, and polymer-electrolyte gating. Both the experiments demonstrate a very large phase effect in good agreement with numerical calculations. The reported results validate the Kubo model for the case of graphene-Si photonics interfaces and for propagation in this type of waveguide. This is fundamental for the next design and fabrication of future graphene-silicon photonics devices. (C) 2016 Optical Society of America
引用
收藏
页码:29984 / 29993
页数:10
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