Sizing CMOS Amplifiers by PSO and MOL to Improve DC Operating Point Conditions

被引:20
作者
Tlelo-Cuautle, Esteban [1 ]
Alejandro Valencia-Ponce, Martin [1 ]
Gerardo de la Fraga, Luis [2 ]
机构
[1] Natl Inst Astrophys Opt & Elect INAOE, Dept Elect, Puebla 72840, Mexico
[2] Natl Polytech Inst CINVESTAV, Ctr Res & Adv Studies, Dept Comp Sci, Ciudad De Mexico 07360, Mexico
关键词
CMOS OTA; DC operating point; optimal sizing; particle swarm optimization; many optimizing liaisons; Monte Carlo; PVT; HIGH-GAIN; OPTIMAL-DESIGN; OP-AMP; OPTIMIZATION; TRANSCONDUCTANCE; ENHANCEMENT; OTA; PHASE;
D O I
10.3390/electronics9061027
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
The sizes of the metal-oxide-semiconductor (MOS) transistors in an operational amplifier must guarantee strong direct current operating point (DCOP) conditions. This paper shows the usefulness of two population-based optimization algorithms to size transistors, namely-particle swarm optimization (PSO) and many optimizing liaisons (MOL). Both optimization algorithms link the circuit simulator SPICE to measure electrical characteristics. However, SPICE provides an output-file indicating that a transistor is in strong inversion but the DCOP can be in the limit, and it can switch to a different condition. In this manner, we highlight the application of PSO and MOL to size operational transconductance amplifiers (OTAs), which DCOP conditions are improved by the introduction of a procedure that handles constraints to ensure that the transistors are in the appropriate DCOP. The Miller and RFC-OTA are the cases of study, and their sizing is performed using UMC 180 nm CMOS technology. In both OTAs, the objective function is the maximization of the gain-bandwidth product under the main constraint of guaranteeing DCOPs to improve two figures of merit and to provide robustness to Monte Carlo simulations and PVT variations.
引用
收藏
页码:1 / 19
页数:19
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