On the stability and reliability of Sr1-xBaxSi2O2N2:Eu2+ phosphors for white LED applications

被引：44

作者：

Cho, I. H. ^{[1
]}

Anoop, G. ^{[1
]}

Suh, D. W. ^{[1
]}

Lee, S. J. ^{[1
]}

Yoo, J. S. ^{[1
]}

机构：

[1] Chung Ang Univ, Sch Chem Engn & Mat Sci, Display Mat Lab, Seoul 156756, South Korea

来源：

OPTICAL MATERIALS EXPRESS | 2012年 / 2卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

LIGHT-EMITTING DIODE; LUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE PROPERTIES; SILICON-OXYNITRIDE; YELLOW PHOSPHOR; REAL STRUCTURE; EU2+; SIALON; SR; BA;

D O I：

10.1364/OME.2.001292

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sr1-xBaxSi2O2N2:Eu2+ phosphors were synthesized using high temperature solid state reactions and the reliability of the as-synthesized phosphors for White LED applications was investigated. The oxidation resistance of the phosphors was investigated by baking the phosphors at various temperatures in air for 2 hours and also at 85 degrees C, 85% relative humidity for 150 hours. The photo stability of the phosphor was studied by illuminating the phosphor using a high power laser diode (450 nm) at various laser fluxes. Phosphor converted LEDs were fabricated using the assynthesized Sr1-xBaxSi2O2N2:Eu2+ (x = 0 and 0.40) phosphors. The long term stability of the fabricated LEDs was tested by keeping the LEDs at 85 degrees C and 85% relative humidity for 800 hrs. Even though phosphors show high thermal and chemical stability, the electroluminescent (EL) intensity of the fabricated LEDs drops by 15% after 800 hrs of operation. The degradation of EL intensity of the device might be the result of thermally assisted photo-ionization of Eu2+ ions in the phosphor. (c) 2012 Optical Society of America

引用

页码：1292 / 1305

页数：14

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