PECVD SiNX induced hydrogen passivation in String Ribbon silicon

被引：14

作者：

Yelundur, V ^{[1
]}

Rohatgi, A ^{[1
]}

Jeong, JW ^{[1
]}

Gabor, AM ^{[1
]}

Hanoka, JI ^{[1
]}

Wallace, RL ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Excellence Photovoltaics Res & Educ, Atlanta, GA 30332 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915760

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

To improve the bulk minority carrier lifetime in String Ribbon silicon, SiNx induced defect passivation during a post deposition anneal is investigated. Our results indicate that SiNx induced hydrogen passivation is very effective when the SiNx film is annealed in conjunction with a screen-printed Al layer on the back. In addition, it is found that controlled rapid cooling can be used to enhance the defect passivation process. A model is proposed which relates the high temperature passivation to the release of hydrogen from the SiNx film, the injection of vacancies from backside Al alloying, and the retention of hydrogen at defect sites. High efficiency screen-printed String Ribbon solar cells (> 14.5%) are fabricated utilizing the simultaneous SiNx/Al anneal in a belt furnace for hydrogenation and Al-BSF formation, followed by RTP firing of screen-printed contacts to improve the retention of hydrogen at defects.

引用

页码：91 / 94

页数：4

共 9 条

[1] Hydrogen-defect interactions in Si [J].

Estreicher, SK ;

Hastings, JL ;

Fedders, PA .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 58 (1-2) :31-35

[2] Defect-induced dissociation of H2 in silicon [J].

Estreicher, SK ;

Hastings, JL ;

Fedders, PA .

PHYSICAL REVIEW B, 1998, 57 (20) :R12663-R12665

[3] Thermal stability of hydrogen molecule in crystalline silicon [J].

Fukata, N ;

Murakami, K ;

Ishioka, K ;

Nakamura, KG ;

Kitajima, M ;

Fujimura, S ;

Kikuchi, J ;

Haneda, H .

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 :211-215

[4]

Jeong J. H, IN PRESS

[5] HYDROGEN CONTENT OF PLASMA-DEPOSITED SILICON-NITRIDE [J].

LANFORD, WA ;

RAND, MJ .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2473-2477

[6] Trapping of minority carriers in multicrystalline silicon [J].

Macdonald, D ;

Cuevas, A .

APPLIED PHYSICS LETTERS, 1999, 74 (12) :1710-1712

[7]

NAGEL H, 1997, 14 EUR PVSEC BARC, P762

[8]

NARASIMHA S, 1997, 26 IEEE PVSC, P63

[9] Thin silicon string ribbon [J].

Wallace, RL ;

Hanoka, JI ;

Rohatgi, A ;

Crotty, G .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 48 (1-4) :179-186

← 1 →