Raman scattering of polycrystalline 3C-SiC film deposited on AlN buffer layer by using CVD with HMDS

被引：8

作者：

Chung, Gwiy-Sang ^{[1
]}

Kim, Kang-San ^{[1
]}

机构：

[1] Univ Ulsan, Sch Elect Engn, Ulsan 680749, South Korea

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 12期

关键词：

AlN; Poly; 3C-SiC; Raman scattering; HMDS;

D O I：

10.1016/j.mejo.2008.06.053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the Raman scattering characteristics of poly (polycrystalline) 3C-SiC thin films deposited on AlN buffer layer by atmospheric pressure chemical vapor deposition (APCVD) using hexamethyldisilane (MHDS) and carrier gases (Ar+H(2)). The Raman spectra of SiC films deposited on AlN layer of before and after annealing were investigated according to the growth temperature of 3C-SiC. Two strong Raman peaks, which mean that poly 3C-SiC admixed with nanoparticle graphite, were measured in them. The biaxial stress of poly 3C-SiC/AIN was calculated as 896 MPa from the Raman shifts of 3C-SiC deposited at 1180 degrees C on AlN of after annealing. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1405 / 1407

页数：3

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