Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

被引：129

作者：

Huang, Chi-Hsin ^{[1
]}

Huang, Jian-Shiou ^{[1
]}

Lai, Chih-Chung ^{[1
]}

Huang, Hsin-Wei ^{[1
]}

Lin, Su-Jien ^{[1
]}

Chueh, Yu-Lun ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

ACS APPLIED MATERIALS & INTERFACES | 2013年 / 5卷 / 13期

关键词：

resistive switching; ReRAM; ZnO; memristor; nonvolatile memory; multistate storage; COEXISTENCE;

D O I：

10.1021/am4007287

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A bias polarity-manipulated transformation from filamentary to homogeneous resistive switching was demonstrated on a Pt/ZnO thin film/Pt device. Two types of switching behaviors, exhibiting different resistive switching characteristics and memory performances were investigated in detail. The detailed transformation mechanisms are systematically proposed. By controlling different compliance currents and RESET-stop voltages, controllable multistate resistances in low resistance states and a high resistance states in the ZnO thin film metalinsulatormetal structure under the homogeneous resistive switching were demonstrated. We believe that findings would open up opportunities to explore the resistive switching mechanisms and performance memristor with multistate storage.

引用

页码：6017 / 6023

页数：7

共 19 条

[1] Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films [J].