Large Area Resist-Free Soft Lithographic Patterning of Graphene

被引：27

作者：

George, Antony ^{[1
]}

Mathew, S. ^{[2
]}

van Gastel, Raoul ^{[1
]}

Nijland, Maarten ^{[1
]}

Gopinadhan, K. ^{[2
]}

Brinks, Peter ^{[1
]}

Venkatesan, T. ^{[2
]}

ten Elshof, Johan E. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

[2] Natl Univ Singapore, Dept Elect & Comp Engn, NUSNNI NanoCore, Singapore 117576, Singapore

来源：

SMALL | 2013年 / 9卷 / 05期

关键词：

soft lithography; graphene; patterning; plasma etching; resist-free patterning; NANOSPHERE LITHOGRAPHY; SUSPENDED GRAPHENE; ELECTRONICS; FABRICATION; TRANSISTORS; MOBILITY; CARBON; FILMS;

D O I：

10.1002/smll.201201889

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Large area low-cost patterning is a challenging problem in graphene research. A resist-free, single-step, large area and cost effective soft lithographic patterning strategy is presented for graphene. The technique is applicable on any arbitrary substrate that needs to be covered with a graphene film and provides a viable route to large-area patterning of graphene for device applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：711 / 715

页数：5

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