n-type Si/SiGe resonant tunnelling diodes

被引：10

作者：

Paul, DJ

See, P

Zozoulenko, IV

Berggren, KF

Holländer, B

Mantl, S

Griffin, N

Coonan, BP

Redmond, G

Crean, GM

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Linkoping Univ, Dept Phys & Measurement Sci, S-58183 Linkoping, Sweden

[3] Forschungszentrum Julich, Inst Schicht & Ionentechn, D-52425 Julich, Germany

[4] Natl Univ Ireland Univ Coll Cork, Natl Microelect Res Ctr, Cork, Ireland

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 89卷 / 1-3期

关键词：

silicon; germanium; quantum effects; electronic device; tunnelling;

D O I：

10.1016/S0921-5107(01)00785-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant tunnelling diodes (RTDs) have been fabricated using Si/SiGe heterolayers which demonstrate room temperature performance comparable to III-V technology. Peak current densities up to 282 kA cm(-2) with peak-to-valley current ratios (PVCRs) of 2.4 have been demonstrated at room temperature in devices with dimensions of 5 x 5 mum. Scaling the device size demonstrates that the peak current density is inversely proportional to the device area. It is suggested that this is related to thermal limitations in the device structure. Estimates are also produced for the maximum frequency of oscillations of the diodes which suggest that oscillators may operate with speeds comparable to III-V diodes. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：26 / 29

页数：4

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