Hydrogen plasma passivation and improvement of the photovoltaic properties of a GaAs solar cell grown on Si substrate

被引：9

作者：

Wang, G

Ohtsuka, K

Soga, T

Jimbo, T

Umeno, M

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 6A期

关键词：

GaAs-on-Si solar cell; H plasma passivation; AsH3; postannealing; conversion efficiency;

D O I：

10.1143/JJAP.38.3504

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of hydrogen (H) plasma passivation of metalorganic chemical vapor deposition (MOCVD) grown GaAs solar cells on a Si substrate have been studied. After H plasma passivation and postannealing in AsH3 ambient, the conversion efficiency of the GaAs solar cell grown on a Si substrate is increased from 16.3 to 17.2% at AM0. This improvement is thought to be due to the passivation of the; defect-associated recombination centers by H plasma exposure and the recovery of the plasma-induced damages by postannealing the passivated solar cells in AsH3 ambient at 450 degrees C.

引用

页码：3504 / 3505

页数：2

共 6 条

[1]

[Anonymous], 16 IEEE PHOT SPEC C

[2]

DASKUPTA N, 1993, J ELECTROCHEM SOC, V140, P2038

[3] High-efficiency monolithic three-terminal GaAs/Si tandem solar cells fabricated by metalorganic chemical vapor deposition [J].