Silicon Carbide High-Temperature Packaging Module Fabrication

被引:0
作者
Brokaw, Wendell [1 ]
Elmes, John [2 ]
Grummel, Brian [1 ]
Shen, Z. John [3 ]
Wu, Thomas X. [1 ]
机构
[1] Univ Cent Florida, Coll Elect Engn & Comp Sci, Orlando, FL 32826 USA
[2] ApECOR, Orlando, FL 32826 USA
[3] IIT, IIT Armour Coll Engn, Chicago, IL 60616 USA
来源
2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2013年
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A proposed method for accommodating high-temperature operation has been studied and developed through combined efforts of Advanced Power Electronics Corporation (ApECOR) and University of Central Florida. A novel process is being explored that will ultimately lead to design, fabrication, and verification of high temperature packaging for silicon carbide (SiC) power modules. The process is established to advance the operational capabilities of power modules during high-temperature conditions. Prototype modules were produced and underwent significant testing to establish capability of operation at a minimum temperature of 350 degrees C with probable expectation of operation in excess of 400 degrees C. A strenuous thermal cycle testing apparatus was established to rapidly cycle prototype modules between 80 degrees C and 350 degrees C in excess of 150 iterations per module. Analysis of the testing data did not exhibit degradation in the module performance characteristics, indicating successful module design performance. Based on the scope and goals of this research effort, further development of the design process is believed to be feasible for progression towards further development and commercialization.
引用
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页码:178 / 181
页数:4
相关论文
共 9 条
[1]  
Callanan Robert J., 2008, IECON 2008 - 34th Annual Conference of IEEE Industrial Electronics Society, P2885, DOI 10.1109/IECON.2008.4758417
[2]   Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].
Casady, JB ;
Johnson, RW .
SOLID-STATE ELECTRONICS, 1996, 39 (10) :1409-1422
[3]   SiC microwave power technologies [J].
Clarke, RC ;
Palmour, JW .
PROCEEDINGS OF THE IEEE, 2002, 90 (06) :987-992
[4]   Status and prospects for SiC power MOSFETs [J].
Cooper, JA ;
Melloch, MR ;
Singh, R ;
Agarwal, A ;
Palmour, JW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) :658-664
[5]  
Lin ZG, 2005, 2005 10TH INTERNATIONAL SYMPOSIUM ON ADVANCED PACKAGING MATERIALS: PROCESSES, PROPERTIES AND INTERFACES, P156
[6]  
MACDONALD WD, 1992, ANNU REV MATER SCI, V22, P23
[7]  
MARTIN TO, HIGH TEMPERATURE ALU
[8]  
Saddow S. E., 2004, Advances in Silicon Carbide Processing and Applications
[9]  
Savrun E., 2002, Proceedings of IEEE Sensors 2002. First IEEE International Conference on Sensors (Cat. No.02CH37394), P1139, DOI 10.1109/ICSENS.2002.1037274