Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy

被引：2

作者：

Bolshakov, A. S. ^{[1
]}

Chaldyshev, V. V. ^{[1
,2
,3
]}

Babichev, A. V. ^{[1
,2
,5
]}

Kudryashov, D. A. ^{[2
]}

Gudovskikh, A. S. ^{[2
,4
]}

Morozov, I. A. ^{[2
]}

Sobolev, M. S. ^{[2
]}

Nikitina, E. V. ^{[2
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] St Petersburg Acad Univ, Nanotechnol Res & Educ Ctr, Russian Acad Sci, St Petersburg 194021, Russia

[3] Peter Great St Petersburg Polytech Univ, St Petersburg 195251, Russia

[4] St Petersburg Electrotech Univ LETI, St Petersburg 197376, Russia

[5] Connector Opt LLC, St Petersburg 194292, Russia

来源：

SEMICONDUCTORS | 2015年 / 49卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

REFLECTION; SPECTRA;

D O I：

10.1134/S1063782615110044

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The significant influence of interference effects on individual peak areas in the electroreflectance spectrum is detected.

引用

页码：1400 / 1404

页数：5

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