A 24GHz Wideband Single-Channel SiGe Bipolar Transceiver Chip for Monostatic FMCW Radar Systems

被引:0
|
作者
Bredendiek, Christian [1 ]
Pohl, Nils [1 ]
Jaeschke, Timo [1 ]
Thomas, Sven [1 ]
Aufinger, Klaus [2 ]
Bilgic, Attila [3 ]
机构
[1] Ruhr Univ Bochum, D-44780 Bochum, Germany
[2] Infineon Technol AG, D-85579 Neubiberg, Germany
[3] KROHNE Messtechn, D-47058 Duisburg, Germany
来源
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper a monostatic fully integrated single-channel SiGe transceiver chip around a center frequency of 24 GHz is presented. The architecture consists of a fundamental VCO, a receive mixer, a divider chain, and coupling/matching networks. All circuits, except for the divider, are designed with the extensive use of on-chip monolithic integrated spiral inductors. The chip is fabricated in a SiGe bipolar production technology which offers an f(T) of 170 GHz and f(max) of 250 GHz. The phase noise at 1 MHz offset is better than -100 dBc/Hz in a wide frequency range of 8 GHz. The peak output power of the chip is -1 dBm while the receive mixer offers a 1 dBm input referred compression point to keep it from being saturated. The chip has a power consumption of 245 mW and uses an area of 1.51 mm(2). A complete FMCW radar system prototype is also presented with a power consumption below 1.6 W and a range error of approximate to +/- 250 mu m.
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页码:309 / 312
页数:4
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