Compact high power laser-plasma x-ray source for lithography

被引：1

作者：

Gaeta, CJ ^{[1
]}

Rieger, H ^{[1
]}

Turcu, ICE ^{[1
]}

Forber, RA ^{[1
]}

Campeau, SM ^{[1
]}

Cassidy, KL ^{[1
]}

Powers, MF ^{[1
]}

Grygier, RK ^{[1
]}

Maldonado, JR ^{[1
]}

French, G ^{[1
]}

Naungayan, J ^{[1
]}

Kelsy, C ^{[1
]}

Hark, P ^{[1
]}

Morris, JH ^{[1
]}

Foster, RM ^{[1
]}

机构：

[1] JMAR Technol Inc, San Diego, CA 92121 USA

来源：

ADVANCES IN LABORATORY-BASED X-RAY SOURCES AND OPTICS II | 2001年 / 4502卷

关键词：

X-ray source; X-ray Lithography; laser plasma; diode pumped solid state laser;

D O I：

10.1117/12.449863

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A compact laser produced plasma x-ray source radiates 24 Wafts average power of 1nm x-rays in 2pi steradians. The x-ray power conversion efficiency is 9% from the laser average power focused on the x-ray target. The laser-plasma x-ray source is generated by a 300W compact, diode-pumped, solid-state Nd:YAG laser system. The tabletop laser system is constructed on a 4ft x 8ft optical bench and the laser modules are 1ft high. The total wall-plug power consumption for this laser-produced-plasma x-ray source is 22 kW. The x-ray source is optimized for integration with and x-ray stepper to provide a complete x-ray lithography exposure tool for the manufacture of high speed GaAs devices.

引用

页码：82 / 95

页数：14

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