Structural and Electrical Properties of Pure and Cu Doped NiO Films Deposited at Various Oxygen Partial Pressures

被引：1

作者：

Reddy, Y. Ashok Kumar ^{[1
]}

Reddy, A. Mallikarjuna ^{[1
]}

Reedy, A. Sivasankar

Reddy, P. Sreedhara ^{[1
]}

机构：

[1] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

SOLID STATE PHYSICS, VOL 57 | 2013年 / 1512卷

关键词：

Magnetron sputtering; Thin films; Structural Properties; Resistivity; PULSED-LASER DEPOSITION; GROWTH;

D O I：

10.1063/1.4791200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pure and Cu doped NiO thin films were successfully deposited by dc reactive magnetron sputtering technique at various oxygen partial pressures in the range 9 x 10(-5) to 6 x 10(-4) mbar. It was observed that oxygen partial pressure influence the structural and electrical properties. All the deposited films were polycrystalline and exhibited cubic structure with preferential growth along (220) plane for NiO films and (111) and (220) planes for Cu doped NiO films. All the deposited films exhibited p-type conductivity. The electrical resistivity decreased from 62.24 to 9.94 Omega cm and the mobility and carrier concentration were increased with oxygen partial pressure.

引用

页码：640 / 641

页数：2

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