GaAs/AlGaAs superlattice quantum cascade lasers at λ≈13 μm

被引：67

作者：

Strasser, G ^{[1
]}

Gianordoli, S ^{[1
]}

Hvozdara, L ^{[1
]}

Schrenk, W ^{[1
]}

Unterrainer, K ^{[1
]}

Gornik, E ^{[1
]}

机构：

[1] Vienna Univ Technol, A-1040 Vienna, Austria

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 10期

关键词：

D O I：

10.1063/1.124688

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the realization of an injection laser based on intraband transitions in a finite AlGaAs/GaAs superlattice. The active material is a 30 period sequence of injectors/active regions made from AlGaAs/GaAs quantum wells. By an applied electric field, electrons are injected into the second miniband of a chirped superlattice and relax radiative to the lowest miniband. At a heat-sink temperature of 10 K, the laser emission wavelength is 12.9 mu m with peak optical powers exceeding 100 mW and a threshold current density of 9.8 kA/cm(2). The maximum operating temperature is 50 K. For this device, a waveguide consisting of heavily doped GaAs cladding and low doped core layers has been used as a plasma-enhanced confinement. (C) 1999 American Institute of Physics. [S0003-6951(99)01236-X].

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页码：1345 / 1347

页数：3

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