Structural, ferroelectric, electronic and transport properties of BaTiO3/Pt heterostructures grown on MgO(001)

被引：7

作者：

Minnekaev, M. ^{[1
]}

Bulakh, K. ^{[2
]}

Chouprik, A. ^{[2
]}

Drube, W. ^{[3
]}

Ershov, P. ^{[4
]}

Lebedinskii, Yu. ^{[1
]}

Maksimova, K. ^{[3
,4
]}

Zenkevich, A. ^{[1
,2
,5
]}

机构：

[1] NRNU Moscow Engn Phys Inst, Moscow 115409, Russia

[2] Moscow Phys Tech Inst, Dolgoprudnyi 141700, Moscow Region, Russia

[3] Deutsch Elektronen Synchrotron DESY, D-22603 Hamburg, Germany

[4] Immanuel Kant Balt Fed Univ, Kaliningrad 236041, Russia

[5] NBICS Ctr, Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 109卷

关键词：

BaTiO3; Ferroelectric tunnel junction; Pulsed laser deposition; OPTICAL-PROPERTIES; THIN-FILMS; ENHANCEMENT; PHYSICS;

D O I：

10.1016/j.mee.2013.03.077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we describe the structural and ferroelectric properties of BaTiO3(001)/Pt(001) heterostructures grown by pulsed laser deposition on MgO(001) substrates. By combining HAXPES results on the electronic band line-up at the interfaces of Cr/BaTiO3(001)/Pt(001) trilayers with REELS data of the band gap in ultrathin BaTiO3 layers we reconstruct the shape of the potential energy barrier profile across the corresponding ferroelectric tunnel junction (FTJ). I-V characteristics of FTJs with sub-mu m Au/Cr top electrodes reveal a tunneling electroresistance change by the factor of similar to 30 following the ferroelectric polarization reversal. I-V curves are fitted with the experimentally determined electrostatic potential energy profile for the particular polarization direction to derive the quantitative changes in the barrier profile upon polarization reversal. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：227 / 231

页数：5

共 17 条

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