Silicon nanocrystals embedded in silicon carbide: Investigation of charge carrier transport and recombination

被引：25

作者：

Loeper, Philipp ^{[1
]}

Canino, Mariaconetta ^{[2
]}

Qazzazie, Dureid ^{[1
]}

Schnabel, Manuel ^{[1
]}

Allegrezza, Marco ^{[2
]}

Summonte, Caterina ^{[2
]}

Glunz, Stefan W. ^{[1
]}

Janz, Stefan ^{[1
]}

Zacharias, Margit ^{[3
]}

机构：

[1] Fraunhofer ISE, D-79110 Freiburg, Germany

[2] CNR IMM, I-40129 Bologna, Italy

[3] Univ Freiburg, IMTEK, D-79110 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 03期

关键词：

SOLAR-CELLS; DEVICE; SI;

D O I：

10.1063/1.4789441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An illumination-dependent analysis of silicon nanocrystal p-i-n solar cells is presented within the framework of the constant field approximation. Silicon nanocrystals in silicon carbide were prepared by solid-phase crystallization and contacted with doped a-SixC1-x:H. This paper aims at determining the fundamental transport and recombination properties, i.e., the effective mobility lifetime product, of the nanocrystal layer at device level. Illumination-dependent current-voltage curves are modelled with a voltage-dependent collection function with only two free parameters, and excellent agreement is found between theory and experiment. An effective mobility lifetime product of 10(-10) cm(2)/V is derived and confirmed independently from an alternative method. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789441]

引用

页数：4

共 15 条

[1] Generalized matrix method for calculation of internal light energy flux in mixed coherent and incoherent multilayers [J].