Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

被引：40

作者：

Ohira, Shigeo ^{[1
]}

Arai, Naoki ^{[1
]}

Oshima, Takayoshi ^{[2
]}

Fujita, Shizuo ^{[3
]}

机构：

[1] Nippon Light Met Co Ltd, Shimuzu Ku, Shizuoka 4213291, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan

[3] Kyoto Univ, Int Innovat Ctr, Nishikyo Ku, Kyoto 6158510, Japan

来源：

APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 23期

关键词：

beta-Ga2O3; step and terrace structure; RHEED; AFM;

D O I：

10.1016/j.apsusc.2008.02.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface of beta-Ga2O3 (1 0 0) single crystal grown with floating zone method was treated by chemical mechanical-polishing (CMP) for 30-120 min followed by annealing in oxygen atmosphere at temperature 600-1100 degrees C for 3-6 h. The evolution of the step arrangement was investigated with reflection high energy electron diffraction and atomic force microscopy. Atomically smooth surfaces with atomic step and terrace structure of beta-Ga2O3 substrates were successfully obtained after just CMP treatment as well as CMP treatment and post annealing at 1100 degrees C for 3 h. The uniform step height was 0.57 nm, and smooth terrace width was 100 nm, where the misorientation angle was about 0.36 degrees. The obtained atomically smooth surface provides a potential application for the high-quality epitaxial film growth. (C) 2008 Elsevier B. V. All rights reserved.

引用

页码：7838 / 7842

页数：5

共 10 条

[1] A reinvestigation of beta-gallium oxide [J].

Ahman, J ;

Svensson, G ;

Albertsson, J .

ACTA CRYSTALLOGRAPHICA SECTION C-CRYSTAL STRUCTURE COMMUNICATIONS, 1996, 52 :1336-1338

[2]

BARRET RC, 1990, J VAC SCI TECHNOL A, V10, P400

[3] GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces [J].

Gu, X ;

Reshchikov, MA ;

Teke, A ;

Johnstone, D ;

Morkoç, H ;

Nemeth, B ;

Nause, J .

APPLIED PHYSICS LETTERS, 2004, 84 (13) :2268-2270

[4] Improvement of the quality of ZnO substrates by annealing [J].

Ko, HJ ;

Han, MS ;

Park, YS ;

Yu, YS ;

Kim, BI ;

Kim, SS ;

Kim, JH .

JOURNAL OF CRYSTAL GROWTH, 2004, 269 (2-4) :493-498

[5] Fabrication of hexagonal GaN on the surface of βGa2O3 single crystal by nitridation with NH3 [J].

Ohira, S ;

Yoshioka, M ;

Sugawara, T ;

Nakajima, K ;

Shishido, T .

THIN SOLID FILMS, 2006, 496 (01) :53-57

[6] Behavior of the (0001) surface of sapphire upon high-temperature annealing [J].

Ribic, Primoz Rebernik ;

Bratina, Gvido .

SURFACE SCIENCE, 2007, 601 (01) :44-49

[7] Epitaxial growth of GaN on (100) β-Ga2O3 substrates by metalorganic vapor phase epitaxy [J].

Shimamura, K ;

Víllora, EG ;

Domen, K ;

Yui, K ;

Aoki, K ;

Ichinose, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L7-L8

[8] Synthesis and control of conductivity of ultraviolet transmitting beta-Ga2O3 single crystals [J].

Ueda, N ;

Hosono, H ;

Waseda, R ;

Kawazoe, H .

APPLIED PHYSICS LETTERS, 1997, 70 (26) :3561-3563

[9] Effects of surface treatment on sapphire substrates [J].

Wang, YZ ;

Liu, SL ;

Peng, GL ;

Zhou, SM ;

Xu, J .

JOURNAL OF CRYSTAL GROWTH, 2005, 274 (1-2) :241-245

[10] ATOMIC-SCALE FORMATION OF ULTRASMOOTH SURFACES ON SAPPHIRE SUBSTRATES FOR HIGH-QUALITY THIN-FILM FABRICATION [J].

YOSHIMOTO, M ;

MAEDA, T ;

OHNISHI, T ;

KOINUMA, H ;

ISHIYAMA, O ;

SHINOHARA, M ;

KUBO, M ;

MIURA, R ;

MIYAMOTO, A .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2615-2617

← 1 →