Characterization of Pt/multiferroic BiFeO3/(Ba,Sr)TiO3/Si stacks for nonvolatile memory applications

被引：19

作者：

Yeh, Chia-Shiu ^{[1
]}

Wu, Jenn-Ming ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 15期

关键词：

D O I：

10.1063/1.3001800

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Pt/BiFeO3(BFO)/(Ba,Sr)TiO3(BST)/Si metal-ferroelectric-insulator/Si (MFIS) structures were fabricated by rf-magnetron sputtering. The electric properties of the BFO ferroelectric film with BST insulating buffer on Si substrates were investigated. BST demonstrates excellent insulating properties on Si substrates. The MFIS structure exhibits clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of BFO. The maximum memory window of the MFIS is 3.86 V, which is a remarkable improvement in comparison with previously reported 0.8 V. Trapped charge and charge injection are found to initiate when the sweeping voltage is higher than 8 and 9 V, respectively. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3001800]

引用

页数：3

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