Investigation of Retention Noise for 3-D TLC NAND Flash Memory

被引：6

作者：

Wang, Kunliang ^{[1
]}

Du, Gang ^{[1
]}

Lun, Zhiyuan ^{[2
]}

Liu, Xiaoyan ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Hisilicon Techol Co Ltd, Solid State Dr Dept, Hangzhou 310052, Zhejiang, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Retention V-th distribution; retention noise; 3-D TLC NAND flash memory; reliability; THRESHOLD VOLTAGE DISTRIBUTION; GATE; VARIABILITY; INTERFERENCE; PERFORMANCE; RECOVERY; MODEL; READ;

D O I：

10.1109/JEDS.2018.2886359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the retention noise [electron emission statistics (EES)] after program operation of 3-D triple-level program cell (TLC) NAND flash memory is investigated. Three main noise sources, consisting of essential EES (EEES), electron numbers fluctuation, and device parameters fluctuation to broaden the retention V-th distributions are comprehensively considered, and the corresponding analytic models are developed. The impact of device parameters fluctuation is relatively larger than EEES and electron numbers fluctuation for our measured 3-D TLC NAND flash memory devices. Using the proposed models, the calculated Vth distributions after different data retention times have good agreements with the measurements, which validate our proposed models. This paper provides a method to predict the Vth distributions accurately and efficiently, and can help in improving reliability of 3-D TLC and quad-level program cell NAND flash memory.

引用

页码：150 / 157

页数：8

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