metal oxide;
nanowire;
organic;
transparent;
transistor;
electronics;
dielectric;
semiconductor;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this investigation, synthetic and fabrication approaches to new organic, inorganic, and hybrid materials/devices for flexible/transparent electronic applications are presented. The covered topics are: 1. Utilization of new solution-processable dielectrics exhibiting ultra-high capacitance, low leakage, and high breakdown fields. 2. Development of new low-temperature and/or solution phase processes for thin-film deposition of optically transparent inorganic/hybrid semiconductors. 3. Rational design, realization, and understanding of new electrically-active high-mobility transparent n-type organic semiconductors. We demonstrate that the combinations of these materials sets allow the fabrication of transistors and electronic circuits excellent performance characteristics. In particular, we show several examples where transparent/flexible transistors and circuits are achieved exhibiting excellent performance.
机构:
IBM Research Division, Thomas J. Watson Res. Cent., P.O. Box 218, Yorktown Heights, NY 10598, United StatesIBM Research Division, Thomas J. Watson Res. Cent., P.O. Box 218, Yorktown Heights, NY 10598, United States
Mitzi, D.B.
Chondroudis, K.
论文数: 0引用数: 0
h-index: 0
机构:
IBM Research Division, Thomas J. Watson Res. Cent., P.O. Box 218, Yorktown Heights, NY 10598, United StatesIBM Research Division, Thomas J. Watson Res. Cent., P.O. Box 218, Yorktown Heights, NY 10598, United States
Chondroudis, K.
Kagan, C.R.
论文数: 0引用数: 0
h-index: 0
机构:
IBM Research Division, Thomas J. Watson Res. Cent., P.O. Box 218, Yorktown Heights, NY 10598, United StatesIBM Research Division, Thomas J. Watson Res. Cent., P.O. Box 218, Yorktown Heights, NY 10598, United States