Microwave Response of BiFeO3 Films in Parallel-Plate Capacitors

被引：3

作者：

Vorobiev, A. ^{[1
]}

Ahmed, T. ^{[1
]}

Gevorgian, S. ^{[1
]}

机构：

[1] Chalmers Univ Technol, S-41296 Gothenburg, Sweden

来源：

INTEGRATED FERROELECTRICS | 2012年 / 134卷

基金：

瑞典研究理事会;

关键词：

THIN-FILM;

D O I：

10.1080/10584587.2012.665307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dielectric response of the BiFeO3 films in a parallel-plate capacitor configuration is studied in the frequency range 1 MHz-30 GHz and under dc electric field up to 45 V/mu m in view of their application in tunable film bulk acoustic wave resonators. The observed relatively high permittivity 130 without remarkable frequency dispersion is explained by contribution of the domain wall vibrations. It is shown that the substrate induced strain and Maxwell-Wagner contributions are negligible. The measured dielectric response allows estimation of the BiFeO3 sound velocity and acoustic impedance as 3100 m/s and 26 . 10(6) kg/m(2)s, respectively.

引用

页码：111 / 117

页数：7

共 18 条

[1] EMISSION OF GHZ SHEAR-WAVES BY FERROELASTIC DOMAIN-WALLS IN FERROELECTRICS [J].