Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel films

被引:58
|
作者
Murray, C
Flannery, C
Streiter, I
Schulz, SE [1 ]
Baklanov, MR
Mogilnikov, KP
Himcinschi, C
Friedrich, M
Zahn, DRT
Gessner, T
机构
[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[3] IMEC, Louvain, Belgium
[4] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[5] Chemnitz Univ Technol, Inst Phys, D-09107 Chemnitz, Germany
关键词
xerogel; thin film; low-k dielectric; porous; SiO2; spin-on; characterisation; porosity; elastic modulus;
D O I
10.1016/S0167-9317(01)00589-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A range of mesoporous xerogel low-k dielectric films were prepared and characterised using complementary techniques: Laser-generated surface acoustic waves, ellipsometric porosimetry, Rutherford backscattering and nanoindentation. The density, porosity, pore size distribution, cumulative surface area, elastic modulus and hardness of the films were measured as well as their dielectric constants. Dielectric constant values of k = 1.7-2.3 were measured for samples with porosities of 36-55%. Mean pore radii values of 2.2-4.2 nm and surface areas of 280-240 m(3) cm(-3) were also obtained. Using porosity and mean film density values determined using different techniques, the film skeletal density of these samples were calculated to be approximate to 1.4 g cm(-3), almost C 40% lower than that of dense SiO2. The elastic moduli of the films were found to be E < 4 GPa. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:133 / 141
页数:9
相关论文
共 50 条
  • [31] Nondestructive stiffness and density characterization of porous low-K films by surface acoustic wave spectroscopy
    Flannery, CM
    Baklanov, MR
    PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2002, : 233 - 235
  • [32] Low-K factor of SiO2 layer on Si irradiated by YAG:Nd laser
    Medvid, A.
    Onufrijevs, P.
    Mellikov, E.
    Kropman, D.
    Muktepavela, F.
    Bakradze, G.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2007, 353 (5-7) : 703 - 707
  • [33] Fluorine-doped SiO2 and fluorocarbon low-k dielectrics investigated by SIMS
    Cwil, M.
    Kalisz, M.
    Konarski, P.
    APPLIED SURFACE SCIENCE, 2008, 255 (04) : 1334 - 1337
  • [34] Young's modulus determination of low-k porous films by wide-band DCC/LD LSAW
    白茂森
    傅星
    Dante Dorantes
    金宝印
    胡小唐
    Journal of Semiconductors, 2011, (10) : 26 - 31
  • [35] Analyses of interface adhesion between porous SiO2 low-k film and SiC/SiN layers by nanoindentation and nanoscratch tests
    Chang, Shou-Yi
    Huang, Yi-Chung
    MICROELECTRONIC ENGINEERING, 2007, 84 (02) : 319 - 327
  • [36] Young's modulus determination of low-k porous films by wide-band DCC/LD LSAW
    Bai Maosen
    Fu Xing
    Dorantes, Dante
    Jin Baoyin
    Hu Xiaotang
    JOURNAL OF SEMICONDUCTORS, 2011, 32 (10)
  • [37] Electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems including Joule heating effect
    Wu, W
    Kang, SH
    Yuan, JS
    Oates, AS
    2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, : 165 - 166
  • [38] QUANTITATIVE MEASUREMENTS OF WATER CONTENT AND POROSITY OF LOW TEMPERATURE DEPOSITED SIO2 FILMS
    PLISKIN, WA
    LIU, CI
    ESCH, RP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : C88 - &
  • [39] Simultaneous Determination of Young's Modulus and Density of Ultrathin Low-k Films Using Surface Acoustic Waves
    Zhang, Li
    Xiao, Xia
    Zhang, Jinsong
    Liu, Zhuo
    Huang, Yiting
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2024, 221 (07):
  • [40] Effect of annealing on the properties of low-k nanoporous SiO2 films prepared by sol-gel method with catalyst HF
    He, Z. W.
    Liu, X. Q.
    Xu, D. Y.
    Wang, Y. Y.
    MICROELECTRONICS RELIABILITY, 2006, 46 (12) : 2062 - 2066