Comparison of techniques to characterise the density, porosity and elastic modulus of porous low-k SiO2 xerogel films

被引:58
|
作者
Murray, C
Flannery, C
Streiter, I
Schulz, SE [1 ]
Baklanov, MR
Mogilnikov, KP
Himcinschi, C
Friedrich, M
Zahn, DRT
Gessner, T
机构
[1] Chemnitz Univ Technol, Ctr Microtechnol, D-09107 Chemnitz, Germany
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
[3] IMEC, Louvain, Belgium
[4] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
[5] Chemnitz Univ Technol, Inst Phys, D-09107 Chemnitz, Germany
关键词
xerogel; thin film; low-k dielectric; porous; SiO2; spin-on; characterisation; porosity; elastic modulus;
D O I
10.1016/S0167-9317(01)00589-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A range of mesoporous xerogel low-k dielectric films were prepared and characterised using complementary techniques: Laser-generated surface acoustic waves, ellipsometric porosimetry, Rutherford backscattering and nanoindentation. The density, porosity, pore size distribution, cumulative surface area, elastic modulus and hardness of the films were measured as well as their dielectric constants. Dielectric constant values of k = 1.7-2.3 were measured for samples with porosities of 36-55%. Mean pore radii values of 2.2-4.2 nm and surface areas of 280-240 m(3) cm(-3) were also obtained. Using porosity and mean film density values determined using different techniques, the film skeletal density of these samples were calculated to be approximate to 1.4 g cm(-3), almost C 40% lower than that of dense SiO2. The elastic moduli of the films were found to be E < 4 GPa. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:133 / 141
页数:9
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