Application of liftoff low-temperature-grown GaAs on transparent substrates for THz signal generation

被引：32

作者：

Heiliger, HM ^{[1
]}

Vosseburger, M ^{[1
]}

Roskos, HG ^{[1
]}

Kurz, H ^{[1
]}

Hey, R ^{[1
]}

Ploog, K ^{[1
]}

机构：

[1] PAUL DRUDE INST FESTKORPERELEKT,D-10117 BERLIN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.117357

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial liftoff (ELO) of low-temperature-grown GaAs (LT-GaAs) is employed to fabricate (sub)picosecond photoconductive switches on optically transparent substrates for THz applications. Glass is selected as a substrate for on-wafer probes while sapphire is chosen for free-space antennas. (C) 1996 American Institute of Physics.

引用

页码：2903 / 2905

页数：3

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