Electronic structures of zigzag SiC nanoribbons with asymmetric hydrogen-terminations
被引:45
作者:
Ding, Yi
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机构:
Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R ChinaHangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China
Ding, Yi
[1
]
Wang, Yanli
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机构:
Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R ChinaHangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China
Wang, Yanli
[2
]
机构:
[1] Hangzhou Normal Univ, Dept Phys, Hangzhou 310036, Zhejiang, Peoples R China
[2] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China
density functional theory;
energy gap;
Fermi level;
ferromagnetic materials;
metal-insulator transition;
nanomagnetics;
nanoribbons;
silicon compounds;
wide band gap semiconductors;
SILICON-CARBON NANORIBBONS;
GRAPHENE NANORIBBONS;
EDGE RECONSTRUCTION;
HALF-METALLICITY;
PRISTINE;
D O I:
10.1063/1.4732786
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Using hybrid density functional calculations, we investigate the electronic properties of zigzag SiC nanoribbons (ZSiCNRs) with different hydrogen-terminations. We find that the asymmetric hydrogen-terminations can break the magnetic degeneracy and favor ferromagnetic state in the ZSiCNRs. The nanoribbons are transformed to half-metals by the bare Si edge, while the saturated Si/C edge brings quasi-half-metallic behaviors, for which two spin-polarized bands intersect at the Fermi level with tiny band gaps. The opening of such tiny gaps depends on the molecular origins of bands, as well as ribbon widths. For wide nanoribbons, all the ZSiCNRs with asymmetric hydrogen-terminations are converted to half-metals. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732786]
机构:
Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, TurkeyBilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
Bekaroglu, E.
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机构:
Topsakal, M.
Cahangirov, S.
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机构:
Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, TurkeyBilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
Cahangirov, S.
Ciraci, S.
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机构:
Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
Bilkent Univ, Dept Phys, TR-06800 Ankara, TurkeyBilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
机构:
Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, TurkeyBilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
Bekaroglu, E.
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机构:
Topsakal, M.
Cahangirov, S.
论文数: 0引用数: 0
h-index: 0
机构:
Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, TurkeyBilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
Cahangirov, S.
Ciraci, S.
论文数: 0引用数: 0
h-index: 0
机构:
Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey
Bilkent Univ, Dept Phys, TR-06800 Ankara, TurkeyBilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey