Lithography yield estimation model to predict layout pattern distortions with a reduced set of lithography simulations

被引:0
作者
Gomez, Sergio [1 ]
Moll, Francesc [1 ]
Mauricio, Joan [1 ]
机构
[1] Univ Politecn Cataluna, Dept Elect Engn, Barcelona, Spain
来源
DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY VIII | 2014年 / 9053卷
关键词
Design for manufacturability; lithography hotspots; yield estimation; layout design;
D O I
10.1117/12.2046208
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A yield estimation model to evaluate the lithography distortion in a printed layout is presented. The yield model relates the probability of non-failure of a lithography hotspot with the manufacturing yield loss. We define a lithography hotspot as a pattern construct with excessive variation under lithography printing using lithography simulations. Thereby, we propose a pattern construct classifier to reduce the set of lithography simulations necessary to estimate the litho-degradation. The application of the yield model is demonstrated for different layout configurations showing that a certain degree of layout regularity improves the manufacturing yield and increases the number of good dies per wafer.
引用
收藏
页数:15
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