Growth and UV detector of serrated GaN nanowires by chemical vapor deposition

被引：0

作者：

Ding, Wenhao ^{[1
,2
]}

Meng, Xianquan ^{[1
,2
,3
]}

机构：

[1] Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China

[2] Wuhan Univ, Sch Phys & Technol, Ctr Nanosci & Nanotechnol, Wuhan 430072, Hubei, Peoples R China

[3] Hubei Nucl Solid Phys Key Lab, Wuhan 430072, Hubei, Peoples R China

来源：

REVISTA MEXICANA DE FISICA | 2020年 / 66卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Chemical vapor deposition; GaN nanowires; copper nanowires; ultraviolet detector; GALLIUM NITRIDE NANOWIRES; SAPPHIRE; FILMS; FABRICATION; EMISSION; SILICON; ORIGIN; SENSOR;

D O I：

10.31349/RevMexFis.66.490

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Serrated GaN nanowires were synthesized on the sapphire substrate by chemical vapor deposition. Copper nanowires were synthesized by a liquid-phase reduction method. The surface morphology of GaN and copper nanowires was observed by scanning electron microscopy. An ultraviolet detector based on GaN nanowires was prepared with copper nanowires as electrode. The results show that the device is a photoconductive detector. The detector has a different response under different wavelength light illumination and has the maximum response under 365 nm ultraviolet light.

引用

页码：490 / 495

页数：6

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