Nondestructive quantitative dopant profiling technique by contact radiography

被引：36
|
作者：
Huang, H.
Stephens, R. B.
Eddinger, S. A.
Gunther, J.
Nikroo, A.
Chen, K. C.
Xu, H. W.
机构：
[1] Gen Atom Co, San Diego, CA 92186 USA
[2] Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
来源：
FUSION SCIENCE AND TECHNOLOGY | 2006年 / 49卷 / 04期
关键词：
D O I：
10.13182/FST49-650
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
We have developed the only non-destructive technique to profile graded dopants in ICF shells to the precision required by the NIF specifications (Doping level must be accurate to 0.03 at. % and its radial distribution accurate to submicron precision). This quantitative contact radiography method was based on precision film digitization and a dopant simulation model. The measurements on Cu/Be and Ge/CH shells agree with those from electron microprobe and X-ray fluorescence.
引用
收藏
页码：650 / 656
页数：7
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