Micro-transfer-printed III-V-on-silicon C-band distributed feedback lasers

被引:44
作者
Haq, Bahawal [1 ,2 ]
Vaskasi, Javad Rahimi [1 ,2 ]
Zhang, Jing [1 ,2 ]
Gocalinska, Agnieszka [3 ]
Pelucchi, Emanuele [3 ]
Corbett, Brian [3 ]
Roelkens, Gunther [1 ,2 ]
机构
[1] Ghent Univ IMEC, Photon Res Grp, B-9052 Ghent, Belgium
[2] Univ Ghent, Ctr Nano & Biophoton, Ghent, Belgium
[3] Univ Coll Cork, Tyndall Natl Inst, Lee Maltings, Cork, Ireland
基金
爱尔兰科学基金会;
关键词
INTEGRATION;
D O I
10.1364/OE.404847
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We report on single-mode C-band distributed feedback lasers fabricated through micro-transfer-printing of semiconductor optical amplifier coupons fabricated on a InP source wafer onto a silicon-on-insulator photonic circuit. The coupons are micro-transfer printed on quarter-wave shifted gratings defined in SiN deposited on the silicon waveguide. Alignment-tolerant adiabatic tapers are used to efficiently couple light from the hybrid III-V/Si waveguide to the Si waveguide circuit. 80 mA threshold current and a maximum single-sided waveguide-coupled output power above 6.9 mW is obtained at 20 degrees C. Single mode operation around 1558 nm with > 33 dB side mode suppression ratio is demonstrated. Micro-transfer printing-based heterogeneous integration is promising for the wafer-level integration of advanced laser sources on complex silicon photonic integrated circuit platforms without changing the foundry process flow. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:32793 / 32801
页数:9
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