Computational screening of high-performance optoelectronic materials using OptB88vdW and TB-mBJ formalisms

被引:106
作者
Choudhary, Kamal [1 ]
Zhang, Qin [2 ]
Reid, Andrew C. E. [1 ]
Chowdhury, Sugata [2 ]
Nhan Van Nguyen [2 ]
Trautt, Zachary [1 ,3 ]
Newrock, Marcus W. [3 ]
Congo, Faical Yannick [1 ]
Tavazza, Francesca [1 ]
机构
[1] NIST, Mat Sci & Engn Div, Gaithersburg, MD 20899 USA
[2] NIST, Phys Measurement Lab, Gaithersburg, MD 20899 USA
[3] NIST, Off Data & Informat, Gaithersburg, MD 20899 USA
关键词
TOTAL-ENERGY CALCULATIONS; SEMICONDUCTORS; EFFICIENCY; DATABASE; DENSITY; SOLIDS; GAP;
D O I
10.1038/sdata.2018.82
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We perform high-throughput density functional theory (DFT) calculations for optoelectronic properties (electronic bandgap and frequency dependent dielectric function) using the OptB88vdW functional (OPT) and the Tran-Blaha modified Becke Johnson potential (MBJ). This data is distributed publicly through JARVIS-DFT database. We used this data to evaluate the differences between these two formalisms and quantify their accuracy, comparing to experimental data whenever applicable. At present, we have 17,805 OPT and 7,358 MBJ bandgaps and dielectric functions. MBJ is found to predict better bandgaps and dielectric functions than OPT, so it can be used to improve the well-known bandgap problem of DFT in a relatively inexpensive way. The peak positions in dielectric functions obtained with OPT and MBJ are in comparable agreement with experiments.
引用
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页数:12
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