In Situ Plating of Porous Mg Network Layer to Reinforce Anode Dendrite Suppression in Li-Metal Batteries

被引:108
作者
Chu, Fulu [1 ,2 ]
Hu, Jiulin [2 ]
Tian, Jing [2 ]
Zhou, Xuejun [2 ]
Li, Zheng [1 ]
Li, Chilin [2 ]
机构
[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Ding Xi Rd, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
Li-metal batteries; dendrite suppression; electrolyte additive; Mg(TFSI)(2); anode modification; FREE LITHIUM DEPOSITION; RECHARGEABLE BATTERIES; ELECTROLYTE; NUCLEATION; GROWTH; ELECTRODEPOSITION; DIFFUSION; SALTS; THIN;
D O I
10.1021/acsami.8b00989
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Li dendrite suppression enables a highly reversible Li-metal battery. However the strategy to smooth Li surface, especially under long-term cycling and high current density, is still a big challenge. Here, we propose a facile additive strategy to reinforce Li dendrite inhibition in a range of ether and carbonate electrolytes. Dissoluble Mg(TFSI)(2) is employed as a degradable electrolyte additive, leading to in situ plating of porous Mg network when contacting reductive Li atoms. Mg adatoms with extremely low diffusion energy barrier as lithiophilic sites enable a smooth or flaky morphology of Li surface even under a high current density of 2 mA/cm(2) and high capacity of 6 mAh/cm(2). Mg-salt additive significantly extends the cycling life of LillCu asymmetric cells up to 240 and 200 cycles for carbonate and ether electrolytes, respectively. Under a current density as high as 5 mA/cm(2), the Lill Cu cell based on ether system can still survive up to 140 cydes with a small voltage hysteresis dose to 60 mV. The hysteresis can be reduced to below 25 mV for lasting 200 cycles at 1 mA/cm(2). This additive strategy provides a facile solution to in situ construction of conductive anode electrolyte interface with low interface resistance for alleviating uneven Li nucleation.
引用
收藏
页码:12678 / 12689
页数:12
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