Numerical analysis of InGaN/GaN-based blue light-emitting diode with graded indium composition barriers

被引：5
作者：
Chung, Ho Young [1 ]
Woo, Kie Young [1 ]
Kim, Su Jin [1 ]
Kim, Kyeong Heon [1 ]
Kim, Hee-Dong [1 ]
Kim, Tae Geun [1 ]
机构：
[1] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2013年 / 64卷
基金：
新加坡国家研究基金会;
关键词：
Efficiency droop; Light-emitting diodes; Numerical simulation; Internal quantum efficiency; Quantum well and barrier; ENHANCEMENT; EFFICIENCY; POWER;
D O I：
10.1016/j.spmi.2013.09.014
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this study, we proposed and numerically investigated graded indium barrier structures of various compositions in InGaN/GaN-based light-emitting diodes (LEDs) to improve their optical and electrical properties. Our simulation results showed that when using an InGaN barrier structure with an up/down-graded indium composition, the output power and internal quantum efficiency of LEDs at 200 mA increased by 2.49 and 2.44 times, respectively, relative to the standard barrier structure. In addition, the proposed structure shows reduced turn-on voltage and reduced efficiency droop. These results are attributed to the improvement of both the hole injection efficiency and uniform carrier distribution within multiple quantum wells. (C) 2013 Elsevier Ltd. All rights reserved.
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页码：1 / 6
页数：6
相关论文
共 12 条
[1]   Origin of efficiency droop in GaN-based light-emitting diodes [J].
Kim, Min-Ho ;
Schubert, Martin F. ;
Dai, Qi ;
Kim, Jong Kyu ;
Schubert, E. Fred ;
Piprek, Joachim ;
Park, Yongjo .
APPLIED PHYSICS LETTERS, 2007, 91 (18)
[2]   Status and future of high-power light-emitting diodes for solid-state lighting [J].
Krames, Michael R. ;
Shchekin, Oleg B. ;
Mueller-Mach, Regina ;
Mueller, Gerd O. ;
Zhou, Ling ;
Harbers, Gerard ;
Craford, M. George .
JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175
[3]   Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers [J].
Kuo, Yen-Kuang ;
Wang, Tsun-Hsin ;
Chang, Jih-Yuan ;
Tsai, Miao-Chan .
APPLIED PHYSICS LETTERS, 2011, 99 (09)
[4]   Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer [J].
Kuo, Yen-Kuang ;
Chang, Jih-Yuan ;
Tsai, Miao-Chan .
OPTICS LETTERS, 2010, 35 (19) :3285-3287
[5]   Enhancement of Light Power for Blue InGaN LEDs by Using Low-Indium-Content InGaN Barriers [J].
Kuo, Yen-Kuang ;
Tsai, Miao-Chan ;
Yen, Sheng-Horng ;
Hsu, Ta-Cheng ;
Shen, Yu-Jiun .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2009, 15 (04) :1115-1121
[6]   Prospects for LED lighting [J].
Pimputkar, Siddha ;
Speck, James S. ;
DenBaars, Steven P. ;
Nakamura, Shuji .
NATURE PHOTONICS, 2009, 3 (04) :179-181
[7]  
Piprek J., 2007, NITRIDE SEMICONDUCTO
[8]   Efficiency droop in nitride-based light-emitting diodes [J].
Piprek, Joachim .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (10) :2217-2225
[9]   Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers [J].
Wang, C. H. ;
Chang, S. P. ;
Ku, P. H. ;
Li, J. C. ;
Lan, Y. P. ;
Lin, C. C. ;
Yang, H. C. ;
Kuo, H. C. ;
Lu, T. C. ;
Wang, S. C. ;
Chang, C. Y. .
APPLIED PHYSICS LETTERS, 2011, 99 (17)
[10]   Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells [J].
Wang, C. H. ;
Chang, S. P. ;
Chang, W. T. ;
Li, J. C. ;
Lu, Y. S. ;
Li, Z. Y. ;
Yang, H. C. ;
Kuo, H. C. ;
Lu, T. C. ;
Wang, S. C. .
APPLIED PHYSICS LETTERS, 2010, 97 (18)
12