Time responses of photovoltage and photocurrent observed in Ag-rich Ag-As(Ge)-S glass

被引:1
作者
Kawaguchi, T
Maruno, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12A期
关键词
Ag-rich chalcogenide glass; photovoltaic effect; photoelectro-ionic property;
D O I
10.1143/JJAP.35.5969
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photovoltage and photocurrent for Ag-As(Ge)-S glass with Ag content of 30-45 at.% sandwiched between Au films have been investigated under various conditions. The unique time responses have been explained in terms of migration of Ag+ ions by counterflow to the motion of photoexcited holes, and subsequent formation of a Ag+ ion-depleted layer in the vicinity of the illuminated electrode.
引用
收藏
页码:5969 / 5974
页数:6
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