Electrical and optical properties of ZrxLa1-xOy nanocrystallites as an advanced dielectric for the next FET devices

In the present work, the spatial distribution of the leakage current through ZrxLa1-xOy thin films with different degrees of crystallinity temperatures was investigated. ZrxLa1-xOy nanocrystallites were prepared by sol-gel method, in that Zr atomic fractions in the combined is at the range of x = 5-60 %. The nanocrystallite's phases and properties were characterized with using X-ray diffraction, fourier transfer infrared radiation, scanning electron microscopy, atomic force microscopy and transmission electron microscopy techniques. Electrical property characterization was also performed with cyclic-voltameter (C-V) technique in TRIS solution (pH = 7.3, with the formula (HOCH2)(3)CNH2). C-V measurements showed current flow through the TRIS reduces at higher temperatures. Moreover, elemental qualitative analysis was performed with map and energy dispersive X-ray spectra confirmed above claims.