EFFECT OF DEPOSITION RATE ON THE MORPHOLOGY OF CdS FILMS DEPOSITED IN AN AMMONIA FREE SOLUTION

被引：0

作者：

Carrillo-Castillo, A.

Aguirre-Tostado, F. S. ^{[1
]}

Salas-Villasenor, A. ^{[2
]}

Mejia, I. ^{[2
]}

Gnade, B. E. ^{[2
]}

Sotelo-Lerma, M. ^{[3
]}

Quevedo-Lopez, M. A. ^{[2
,3
]}

机构：

[1] Ctr Invest Mat Avanzados, Apodaca 666000, Nuevo Leon, Mexico

[2] Univ Texas Dallas, Dept Mat Sci & Engn, Dallas, TX 75083 USA

[3] Univ Sonora, Dept Invest Polimeros & Mat, Hermosillo 83000, Sonora, Mexico

来源：

CHALCOGENIDE LETTERS | 2013年 / 10卷 / 02期

关键词：

Chemical bath deposition; Cadmium sulphide; pH; Deposition rate; CHEMICAL BATH DEPOSITION; THIN-FILMS; NANOPARTICLES;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium sulphide semiconductor thin films have been deposited by chemical bath technique (70 degrees C) on HfO2 substrates. The effect of pH on deposition rate was studied to determine the optimum condition for deposition. CdS films were deposited at pH ranging from 10 to 11.9 in an ammonia-free CBD process employing sodium citrate dihydrate and potassium hydroxide as complexing agents. The increase of pH reduced the deposition rate due to higher complexation and slow generation of Cd2+, improving the morphology of CdS films. X- ray diffraction studies showed hexagonal crystalline phase of CdS with an optical band gap around 2.4 eV as determined by UV-Vis absorption. Fourier transform infrared spectroscopy showed more presence of impurities on CdS films deposited at low deposition rate-high pH.

引用

页码：81 / 86

页数：6

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