Bandgap bowing in BGaN thin films

被引：53

作者：

Ougazzaden, A. ^{[1
]}

Gautier, S. ^{[2
]}

Moudakir, T. ^{[2
]}

Djebbour, Z. ^{[3
,4
]}

Lochner, Z.

Choi, S. ^{[5
,6
]}

Kim, H. J. ^{[5
,6
]}

Ryou, J. -H. ^{[5
,6
]}

Dupuis, R. D. ^{[5
,6
]}

Sirenko, A. A. ^{[7
]}

机构：

[1] Georgia Inst Technol, CNRS, UMI 2958, F-57070 Metz, France

[2] Univ Metz & Supelec, CNRS, UMR 7132, LMOPS, F-57070 Metz, France

[3] Univ Versailles UVSQ, Dept Phys & Engn Sci, F-78035 Versailles, France

[4] Univ Paris 06, Univ Paris 11, CNRS, SUPELEC,UMR 8507,LGEP, F-91192 Gif Sur Yvette, France

[5] Georgia Inst Technol, Ctr Cpds Semicond, Atlanta, GA 30332 USA

[6] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[7] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 08期

关键词：

D O I：

10.1063/1.2977588

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the bandgap variation in thin films of BxGa1-xN grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the BxGa1-xN films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C = 9.2 +/- 0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%. (c) 2008 American Institute of Physics.

引用

页数：3

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