The study of negative differential resistance phenomenon in a two-step barrier diode

被引：0

作者：

Lin, JC

Wang, SJ

Liou, WR

Luo, YC

Cheng, CY

机构：

来源：

ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1996年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a de bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.

引用

页码：140 / 143

页数：4