The study of negative differential resistance phenomenon in a two-step barrier diode

被引:0
作者
Lin, JC
Wang, SJ
Liou, WR
Luo, YC
Cheng, CY
机构
来源
ICSE '96 - 1996 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS | 1996年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, the realization of AlxGa1-xAs/GaAs two-step barrier diode is presented. Experimental observation on the current-voltage (I-V) characteristics of the two-step barrier diode is reported for the first time. At both room temperature and 77K, it shows a strong negative differential resistance (NDR) under forward bias while no similar phenomenon was observed under reverse bias. Such an asymmetric I-V characteristic would open the possibility of NDR in an ac field in the absence of a de bias. Theoretical simulation and experimental I-V characteristics are compared and discussed.
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页码:140 / 143
页数:4
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