Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

被引：16

作者：

Groves, R ^{[1
]}

Stein, K ^{[1
]}

Harame, D ^{[1
]}

Jadus, D ^{[1
]}

机构：

[1] IBM CORP,MICROELECT DIV,HOPEWELL JCT,NY 12533

来源：

PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1996年

关键词：

D O I：

10.1109/BIPOL.1996.554635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / 156

页数：4

共 50 条

[41] Low-temperature diffusion of lithium in silicon-germanium solid solutions [J].

I. G. Atabaev ;

N. A. Matchanov ;

É. N. Bakhranov .

Physics of the Solid State, 2001, 43 :2234-2236

[42] Accurate analysis of silicon, VLSI-technology compatible spiral inductors [J].

Guasticchi, B ;

Ciampolini, P ;

Roselli, L ;

Stopponi, G .

2000 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2000, :1157-1160

[43] SILICON-GERMANIUM ALLOYS AS HIGH-TEMPERATURE THERMOELECTRIC-MATERIALS [J].

BHANDARI, CM ;

ROWE, DM .

CONTEMPORARY PHYSICS, 1980, 21 (03) :219-242

[44] A low-temperature ion vapor deposition technique for silicon and silicon-germanium epitaxy [J].

Mohajerzadeh, S ;

Selvakumar, CR ;

Brodie, DE ;

Robertson, MD ;

Corbett, JM .

CANADIAN JOURNAL OF PHYSICS, 1996, 74 :S69-S73

[45] Low-temperature diffusion of lithium in silicon-germanium solid solutions [J].

Atabaev, IG ;

Matchanov, NA ;

Bakhranov, ÉN .

PHYSICS OF THE SOLID STATE, 2001, 43 (12) :2234-2236

[46] Characterization of high-Q spiral inductors on thick insulator-on-silicon [J].

Rais-Zadeh, M ;

Ayazi, F .

JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2005, 15 (11) :2105-2112

[47] Low-temperature preparation of oxygen- and carbon-free silicon and silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition [J].

Carroll, MS ;

Sturm, JC ;

Yang, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (12) :4652-4659

[48] Design and fabrication of high-Q spiral inductors using MEMS technology [J].

Electronics Research Institute, Cairo, Egypt .

WSEAS Trans. Electron., 2006, 8 (432-436)

[49] A 60-GHz superheterodyne downconversion mixer in silicon-germanium bipolar technology [J].

Reynolds, SK .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (11) :2065-2068

[50] Stress in Silicon-Germanium Nanowires: Layout Dependence and Imperfect Source/Drain Epitaxial Stressors [J].

Eneman, Geert ;

Veloso, Anabela ;

Favia, Paola ;

Hikavyy, Andriy ;

Porret, Clement ;

Arimura, Hiroaki ;

De Keersgieter, An ;

Pourtois, Geoffrey ;

Loo, Roger ;

Spessot, Alessio ;

Matagne, Philippe ;

Ryckaert, Julien ;

Horiguchi, Naoto .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (11) :5380-5385

← 1 2 3 4 5 →