Temperature dependence of Q in spiral inductors fabricated in a silicon-germanium/BiCMOS technology

被引：16

作者：

Groves, R ^{[1
]}

Stein, K ^{[1
]}

Harame, D ^{[1
]}

Jadus, D ^{[1
]}

机构：

[1] IBM CORP,MICROELECT DIV,HOPEWELL JCT,NY 12533

来源：

PROCEEDINGS OF THE 1996 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1996年

关键词：

D O I：

10.1109/BIPOL.1996.554635

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / 156

页数：4

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